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STW52NK30Z

ST Microelectronics
Part Number STW52NK30Z
Manufacturer ST Microelectronics
Description N-CHANNEL MOSFET
Published Sep 16, 2006
Detailed Description www.DataSheet4U.com STW54NK30Z N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH™ MOSFET Table 1: General ...
Datasheet PDF File STW52NK30Z PDF File

STW52NK30Z
STW52NK30Z

Overview
www.
DataSheet4U.
com STW54NK30Z N-CHANNEL 300V - 0.
052Ω - 54A TO-247 Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE STW54NK30Z s s s s s s Figure 1: Package ID 54 A Pw 300 W BVDSS 300 V RDS(on) < 0.
060 Ω TYPICAL RDS(on) = 0.
052 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-247 3 2 1 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special Figure 2: Internal Schematic Diagram care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series DataSheet4U.
com complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
DataShee APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING DC CHOPPERs s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC Table 2: Order Codes SALES TYPE STW54NK30Z MARKING W54NK30Z PACKAGE TO-247 PACKAGING TUBE DataSheet4U.
com February 2005 Rev.
1 1/10 DataSheet 4 U .
com www.
DataSheet4U.
com STW54NK30Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.
5KΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 300 300 ± 30 54 34 200 300 2.
38 6000 4.
5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C ( ) Pulse width limited by safe operating area (1) ISD ≤ 54A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed Table 4: Thermal Data Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction...


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