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STW5NA100FI

ST Microelectronics
Part Number STW5NA100FI
Manufacturer ST Microelectronics
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Published Sep 16, 2006
Detailed Description www.DataSheet4U.com STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW5...
Datasheet PDF File STW5NA100FI PDF File

STW5NA100FI
STW5NA100FI

Overview
www.
DataSheet4U.
com STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW5NA100 STH5NA100FI s s s s s s V DSS 1000 V 1000 V R DS(on) < 3.
5 Ω < 3.
5 Ω ID 4.
6 A 2.
9 A TYPICAL RDS(on) = 2.
9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD TO-247 3 2 1 3 2 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s ISOWATT218 INTERNAL SCHEMATIC DIAGRAM DataSheet4U.
com DataSh ee ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STW5NA100 V DS VDGR V GS ID ID I DM ( • ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature o Unit STH5NA100FI V V V 2.
9 1.
8 18.
4 60 0.
48 4000 A A A W W/ o C V o o 1000 1000 ± 30 4.
6 2.
9 18.
4 150 1.
2  -65 to 150 150 C C 1/6 (•) Pulse width limited by safe operating area October 1997 DataSheet4U.
com DataSheet 4 U .
com www.
DataSheet4U.
com STW5NA100-STH5NA100FI THERMAL DATA TO-247 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 0.
83 30 0.
1 300 ISOWATT218 2.
1 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V) Max Value 4.
2 160 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I G...


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