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SI426DQ

Vishay Siliconix
Part Number SI426DQ
Manufacturer Vishay Siliconix
Description N-Channel 2.5-V (G-S) Rated MOSFET
Published Sep 26, 2006
Detailed Description www.DataSheet4U.com Si6426DQ N-Channel 2.5-V (G-S) Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) 0.035 @ VGS = 4...
Datasheet PDF File SI426DQ PDF File

SI426DQ
SI426DQ


Overview
www.
DataSheet4U.
com Si6426DQ N-Channel 2.
5-V (G-S) Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) 0.
035 @ VGS = 4.
5 V 0.
04 @ VGS = 2.
5 V ID (A) "5.
4 "4.
9 D TSSOP-8 D S S G 1 2 3 4 D Si6426DQ 8 7 6 5 D S S D G Top View S* N-Channel MOSFET DataSheet4U.
com *Source Pins 2, 3, 6, and 7 must be tied common.
DataShee Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 "8 "5.
4 "4.
2 "30 1.
25 1.
5 1.
0 –55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a.
Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600.
Please request FaxBack document #70174.
A SPICE Model data sheet is available for this product (FaxBack document #70545).
Symbol RthJA Limit 83 Unit _C/W DataSheet4U.
com Siliconix S-49534—Rev.
A, 06-Oct-97 DataSheet 4 U .
com 1 www.
DataSheet4U.
com Si6426DQ Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.
5 V VDS w 5 V, VGS = 2.
5 V VGS = 4.
5 V, ID = 5.
4 A rDS(on) gfs VSD VGS = 2.
5 V, ID = 4.
9 A VDS = 10 V, ID = 5.
4 A IS = 1.
25 A, VGS = 0 V "20 "8 0.
025 0.
030 22 0.
7 1.
2 0.
035 0.
04 0.
6 "100 1 5 V nA mA Symbol Test Condition Min Typ Max Unit On State Drain Currenta On-State ID(on) D( ) A Drain Source On-State Drain-Source On State Resistancea Forward Transconductance a Diode Forward Voltagea W S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Char...



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