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MT28F004B3

Micron Technology
Part Number MT28F004B3
Manufacturer Micron Technology
Description (MT28F004B3 / MT28F400B3) FLASH MEMORY
Published Oct 1, 2006
Detailed Description com 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply (Smar...
Datasheet PDF File MT28F004B3 PDF File

MT28F004B3
MT28F004B3

Overview
com 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply (Smart 3) FEATURES • Seven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3): 3.
3V ±0.
3V VCC 3.
3V ±0.
3V VPP application programming 5V ±10% VPP application/production programming1 • Compatible with 0.
3µm Smart 3 device • Advanced 0.
18µm CMOS floating-gate process • Address access time: 80ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence • Byte- or word-wide READ and WRIT...


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