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STB80NE03L-06

ST Microelectronics
Part Number STB80NE03L-06
Manufacturer ST Microelectronics
Description N-CHANNEL POWER MOSFET
Published Oct 9, 2006
Detailed Description www.DataSheet4U.com STB80NE03L-06 STB80NE03L-06-1 N-CHANNEL 30V - 0.005Ω - 80A D2PAK / I2PAK STripFET™ POWER MOSFET TYP...
Datasheet PDF File STB80NE03L-06 PDF File

STB80NE03L-06
STB80NE03L-06

Overview
www.
DataSheet4U.
com STB80NE03L-06 STB80NE03L-06-1 N-CHANNEL 30V - 0.
005Ω - 80A D2PAK / I2PAK STripFET™ POWER MOSFET TYPE STB80NE03L-06 STB80NE03L-06-1 s s s s VDSS 30 V 30 V RDS(on) < 0.
006 Ω < 0.
006 Ω ID 80 A 80 A TYPICAL RDS(on) = 0.
005 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE 100°C 100% AVALANCHE TESTED 3 1 3 12 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
D2PAK I2PAK INTERNAL SCHEMATIC DIAGRAM DataSheet4U.
com APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL,AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
) s DataShee ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature Value 30 30 ± 20 80 60 320 150 1 7 – 55 to 175 (1) ISD ≤ 804A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX.
Unit V V V A A A W W/°C V/ns °C (q ) Pulse width limited by safe operating area February 2003 1/9 DataSheet4U.
com www.
DataSheet4U.
com STB80NE03L-06 / STB80NE03L-06-1 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1 62.
5 300 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj ...


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