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STB20NM50FD-1

ST Microelectronics
Part Number STB20NM50FD-1
Manufacturer ST Microelectronics
Description N-CHANNEL POWER MOSFET
Published Oct 11, 2006
Detailed Description www.DataSheet4U.com STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh™ Power MOSFET (with FAST...
Datasheet PDF File STB20NM50FD-1 PDF File

STB20NM50FD-1
STB20NM50FD-1

Overview
www.
DataSheet4U.
com STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.
22Ω - 20A TO-220/I2PAK FDmesh™ Power MOSFET (with FAST DIODE) TYPE STP20NM50FD STB20NM50FD-1 s s s s s s VDSS 500V 500V RDS(on) <0.
25Ω <0.
25Ω Rds(on)*Qg 8.
36 Ω*nC 8.
36 Ω*nC ID 20 A 20 A TYPICAL RDS(on) = 0.
22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS 3 1 2 12 3 TO-220 I2PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM www.
DataSheet4U.
com s APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDERING INFORMATION SALES TYPE STP20NM50FD STB20NM50FD-1 MARKING P20NM50FD B20NM50FD-1 PACKAGE TO-220 I PAK 2 PACKAGING TUBE TUBE August 2003 1/9 www.
DataSheet4U.
com www.
DataSheet4U.
com DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode.
It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters.
www.
DataSheet4U.
com STP20NM50FD/STB20NM50FD-1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature Value 500 500 ±30 20 14 80 192 1.
2 20 –65 to 150 150 Unit V V V A A A W W/°C V/ns °C °C ( ) Pulse width limited by safe operating area (1) ISD ≤ 20A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX.
THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.
65 62.
5 300 °C/W °C °C/W Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR EAS www.
DataSheet4U.
com Max Value 10 7...


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