DatasheetsPDF.com

IRHN9150

International Rectifier
Part Number IRHN9150
Manufacturer International Rectifier
Description P-CHANNEL TRANSISTOR
Published Oct 15, 2006
Detailed Description com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.885 REPETITIVE AVALANCHE...
Datasheet PDF File IRHN9150 PDF File

IRHN9150
IRHN9150

Overview
... AND dv/dt RATED HEXFET® TRANSISTOR -100 Volt, 0.
120Ω , RAD HARD HEXFET International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si).
Under identical pre- and post-radiation test conditions, International Rectifier’s P-channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.
No compensation in gate drive circuitry is required.
These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.
Single Event Effect, (S...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)