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IRHN9230

International Rectifier
Part Number IRHN9230
Manufacturer International Rectifier
Description P-CHANNEL TRANSISTOR
Published Oct 15, 2006
Detailed Description www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1445 REPETITIVE AVALANC...
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IRHN9230
IRHN9230

Overview
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PD-9.
1445 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR -200 Volt, 0.
8Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 10 5 Rads (Si).
Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.
No compensation in gate drive circuitry is required.
In addition these devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.
Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure.
Since the P-Channel RAD HARD process utilizes Interna...


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