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IRHNJ57230

Part Number	IRHNJ57230
Manufacturer	International Rectifier
Description	RADIATION HARDENED POWER MOSFET
Published	Oct 15, 2006
Detailed Description	www.DataSheet4U.com PD - 93753A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Ra...
Datasheet	IRHNJ57230 PDF File

Overview

www.
DataSheet4U.
com PD - 93753A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.
5) Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si) RDS(on) 0.
20Ω 0.
20Ω 0.
20Ω 0.
25Ω ID 13A 13A 13A 13A IRHNJ57230 200V, N-CHANNEL 4 # TECHNOLOGY c SMD-0.
5 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg.
Mounting Surface Temp.
Weight For footnotes refer to the last page 13 8.
2 52 75 0.
6 ±20 60 13 7.
5 4.
4 -55 to 150 300 ( for 5s ) 1.
0 ( Typical ) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.
irf.
com 1 07/22/02 DataSheet 4 U .
com www.
DataSheet4U.
com IRHNJ57230 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltag...

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IRHNJ57230 RADIATION HARDENED POWER MOSFET - International Rectifier

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