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BAW101S

NXP
Part Number BAW101S
Manufacturer NXP
Description High voltage double diode
Published Oct 16, 2006
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BAW101S High voltage double diode Product data sheet 2003 ...
Datasheet PDF File BAW101S PDF File

BAW101S
BAW101S

Overview
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BAW101S High voltage double diode Product data sheet 2003 May 13 NXP Semiconductors High voltage double diode Product data sheet BAW101S FEATURES • Small plastic SMD package • High switching speed: max.
50 ns • High continuous reverse voltage: 300 V • Electrically insulated diodes.
APPLICATIONS • High voltage switching • Automotive • Communication.
PINNING PIN 1 2 3 4 5 6 DESCRIPTION anode 1 n.
c.
cathode 2 anode 2 n.
c.
cathode 1 DESCRIPTION The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package.
handbook, halfpage 65 4 65 4 MARKING TYPE NUMBER BAW101S MARKING CODE(1) K2∗ Note 1.
∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
12 Top view 3 MBL892 123 Fig.
1 Simplified outline (SOT363) and symbol.
2003 May 13 2 NXP Semiconductors High voltage double diode Product data sheet BAW...


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