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STGW30NC120HD

Part Number	STGW30NC120HD
Manufacturer	ST Microelectronics
Description	N-CHANNEL IGBT
Published	Oct 16, 2006
Detailed Description	STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT Features Type VCES STGW30NC120HD 1200V VCE(s...
Datasheet	STGW30NC120HD PDF File

Overview

STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT Features Type VCES STGW30NC120HD 1200V VCE(sat) @25°C < 2.
75V IC @100°C 30A ■ Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven) ■ Low gate charge ■ Ideal for soft switching application Application ■ Induction heating Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances.
The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop.
3 2 1 TO-247 Figure 1.
Internal schematic diagram Table 1.
Device summary Order code Marking STGW30NC120HD GW30NC120HD Package TO-247 Packaging Tube October 2007 Rev 9 1/13 www.
st.
com 13 Contents Contents STGW30NC120HD 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuit .
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9 4 Package mechanical data .
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10 5 Revision history .
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12 2/13 STGW30NC120HD 1 Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGS = 0) IC (1) Collector current (continuous) at 25°C IC (1) Collector current (continuous) at 100°C ICL (2) Collector current (pulsed) VGE Gate-emitter voltage PTOT Total dissipation at TC = 25°C If Diode RMS forward current at TC = 25°C Tj Operating junction temperature 1.
Calcul...

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STGW30NC120HD N-CHANNEL IGBT - ST Microelectronics

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