DatasheetsPDF.com

XN01210


Part Number XN01210
Manufacturer Panasonic Semiconductor
Title Silicon NPN epitaxial planar type
Description www.DataSheet4U.com Composite Transistors XN01210 (XN1210) Silicon NPN epitaxial planar type Unit: mm For switching/digital circuits ■ Features...
Features
• Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half 3 2.90+0.20
  –0.05 1.9±0.1 (0.95) (0.95) 4 5 0.16+0.10
  –0.06 1.50+0.25
  –0.05 2.8+0.2
  –0.3 2 0.30+0.10
  –0.05 10˚ 1
■ Basic Part Number...

File Size 202.48KB
Datasheet XN01210 PDF File








Similar Ai Datasheet

XN01211 : www.DataSheet4U.com Composite Transistors XN01211 (XN1211) Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 s Features q q 3 4 5 1.50+0.25 –0.05 2.8+0.2 –0.3 Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2 0.30+0.10 –0.05 1 (0.65) 1.1+0.2 –0.1 q UNR1211(UN1211) × 2 elements s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCB.

XN01212 : www.DataSheet4U.com Composite Transistors XN01212 (XN1212) Silicon NPN epitaxial planar type Unit: mm For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 3 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 0.30+0.10 –0.05 10˚ 1 ■ Basic Part Number • UNR2212 (UN2212) × 2 1.1+0.2 –0.1 (0.65) Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rati.

XN01215 : www.DataSheet4U.com Composite Transistors XN1215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1215 × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storag.

XN0121E : www.DataSheet4U.com Composite Transistors XN0121E (XN121E) Silicon NPN epitaxial planar type Unit: mm For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 3 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 0.30+0.10 –0.05 10˚ 1 ■ Basic Part Number • UNR221E (UN221E) × 2 1.1+0.2 –0.1 (0.65) Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rati.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)