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MRF6S21060NBR1

Part Number	MRF6S21060NBR1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Oct 19, 2006
Detailed Description	LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Trans...
Datasheet	MRF6S21060NBR1 PDF File

Overview

LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio, WLL and TD--SCDMA applications.
• Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 14 Watts Avg.
, f = 2115.
5 MHz, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 15.
5 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — --37 dBc in 3.
84 MHz Bandwidth ACPR @ 5 MHz ...

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MRF6S21060NBR1 RF Power Field Effect Transistors - Freescale Semiconductor

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