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PM4575J

Part Number	PM4575J
Manufacturer	Hitachi Semiconductor
Description	Silicon N-Channel Power MOS FET Module
Published	Oct 20, 2006
Detailed Description	www.DataSheet4U.com PM4575J Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • ...
Datasheet	PM4575J PDF File

Overview

www.
DataSheet4U.
com PM4575J Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain Isolated base from Terminal Suitable for motor driver, switching regulator and etc.
DataSheet 4 U .
com www.
DataSheet4U.
com PM4575J Outline LF-J D1 S2 S1/D2 G2 S2 S1 G1 Equivalent Circuit D1 G1 S1 S1/D2 G2 S2 No S1 D1 S2 D2 G1 S1 G2 S2 Electrode Source 1 Drain 1 Source 2 Drain 2 Gate 1 Source 1 Gate 2 Source 2 Terminals M5 screw M5 screw M5 screw M5 screw #110 #110 #110 #110 Remarks Power terminal S2 Signal terminals Absolute Maximum Ratings (Ta = 25°C) (Per FET chip) Item Drain source voltage Gate source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse peak current Channel dissipation Channel temperature Storage temperature Insulation dielectric Notes: 1.
Value at Ta = 25°C 2.
Base to terminals AC minute Symbol V(BR)DSS V(BR)GSS ID I D(peak) I DR I DR(peak) Pch* Tch Tstg Viso* 2 1 Rating 450 ±30 75 180 75 180 300 150 –45 to +125 2000 Unit V V A A A A W °C °C Vrms 2 4 U .
com DataSheet www.
DataSheet4U.
com PM4575J Electrical Characteristics (Ta = 25°C) (Per FET chip) Item Drain to source breakdown voltage Gate to source leak current Gate to source breakdown voltage Drain leak current Gate to source threshold voltage Drain to source saturation voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1.
Pulse Test Symbol V(BR)DSS I GSS V(BR)GSS I DSS VGS(th) VDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min 450 — ±30 — 2.
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PM4575J Silicon N-Channel Power MOS FET Module - Hitachi Semiconductor

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