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SSS2N60A

Fairchild Semiconductor
Part Number SSS2N60A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Oct 20, 2006
Detailed Description com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input...
Datasheet PDF File SSS2N60A PDF File

SSS2N60A
SSS2N60A

Overview
com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 600V Lower RDS(ON) : 3.
892 Ω (Typ.
) SSS2N60A BVDSS = 600 V RDS(on) = 5 Ω ID = 1.
3 A TO-220F 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt T...


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