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STPS60L40CW

ST Microelectronics
Part Number STPS60L40CW
Manufacturer ST Microelectronics
Description LOW DROP POWER SCHOTTKY RECTIFIER
Published Oct 27, 2006
Detailed Description ® STPS60L40CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS A1 IF(AV) 2 x 30 A K VRRM t(s) Tj (...
Datasheet PDF File STPS60L40CW PDF File

STPS60L40CW
STPS60L40CW

Overview
® STPS60L40CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS A1 IF(AV) 2 x 30 A K VRRM t(s) Tj (max) c VF (max) 40 V 150°C 0.
50 V du FEATURES AND BENEFITS ro n LOW FORWARD VOLTAGE DROP FOR LESS P POWER DISSIPATION te n NEGLIGIBLE SWITCHING LOSSES ALLOWING le HIGH FREQUENCY OPERATION o n AVALANCHE CAPABILITY SPECIFIED bs DESCRIPTION - O Dual center tap Schottky barrier rectifier designed ) for high frequency Switched Mode Power Supplies t(s and DC to DC converters.
Packaged in TO-247 this device is intended for c use in low voltage, high frequency inverters, du free-wheeling and polarity protection applications.
Pro ABSOLUTE RATINGS (limiting values, per diode) te Symbol le VRRM so IF(RMS) ObIF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current Tc = 135°C A2 A2 K A1 TO-247 Value Unit 40 V 50 A Per diode 30 A δ = 0.
5 Per device 60 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 600 A IRRM Repetitive peak reverse current tp = 2 µs square F=1kHz 2 A IRSM Non repetitive peak reverse current tp = 100 µs square 4 A PARM Repetitive peak avalanche power tp = 1µs Tj = 25°C 12300 W Tstg Storage temperature range - 65 to + 150 °C Tj Maximum operating junction temperature * 150 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs * : dPtot < 1 thermal runaway condition for a diode on its own heatsink dTj Rth( j − a) July 2003 - Ed: 5A 1/4 STPS60L40CW THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Rth(c) Parameter Per diode Total Coupling Value 0.
75 0.
42 0.
1 Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) ) Symbol t(s IR * te Produc VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C VR = VRRM Tj = 100°C Tj = 25°C IF = 30 A Tj = 125°C IF = 30 A Tj = 25...


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