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BUL770

Part Number	BUL770
Manufacturer	Bourns Electronic Solutions
Description	NPN SILICON POWER TRANSISTOR
Published	Nov 3, 2006
Detailed Description	BUL770 NPN SILICON POWER TRANSISTOR ● ● ● ● ● Designed Specifically for High Frequency Electronic...
Datasheet	BUL770 PDF File

Overview

BUL770 NPN SILICON POWER TRANSISTOR ● ● ● ● ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W hFE 7 to 21 at VCE = 1 V, IC = 800 mA Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.
MDTRACA absolute maximum ratings at 25°C ambient temperature (unless otherwise noted ) RATING Collector-emitter voltage (VBE = 0) Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Peak...

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