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IXFB38N100Q2

IXYS Corporation
Part Number IXFB38N100Q2
Manufacturer IXYS Corporation
Description Power MOSFET
Published Nov 6, 2006
Detailed Description www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFB38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Int...
Datasheet PDF File IXFB38N100Q2 PDF File

IXFB38N100Q2
IXFB38N100Q2

Overview
www.
DataSheet4U.
com HiPerFETTM Power MOSFETs IXFB38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS(on)= 0.
25 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Fc Weight 1.
6 mm (0.
063 in.
) from case for 10 s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 38 152 38 60 5.
0 20 890 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A ...


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