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DN3545

Supertex
Part Number DN3545
Manufacturer Supertex
Description N-Channel Depletion-Mode Vertical DMOS FETs
Published Nov 6, 2006
Detailed Description Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features ►► High input impedance ►► Low input capacit...
Datasheet PDF File DN3545 PDF File

DN3545
DN3545

Overview
Supertex inc.
DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage Applications ►► Normally-on switches ►► Solid state relays ►► Converters ►► Linear amplifiers ►► Constant current sources ►► Power supply circuits ►► Telecom General Description These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Ordering Information Part Number Package Options Packing SN3545N3-G TO-92 1000/Bag SN3545N3-G P002 TO-92 2000/Reel SN3545N3-G P003 TO-92 2000/Reel SN3545N3-G P005 TO-92 2000/Reel SN3545N3-G P013 TO-92 2000/Reel SN3545N3-G P014 TO-92 2000/Reel SN3545N8-G TO-243AA (SOT-89) 2000/Reel -G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92 Taping Specifications and Winding Styles Absolute Maximum Ratings Parameter Value Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage BVDSX BVDGX ±20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation under these conditi...


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