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MRF1513NT1

Part Number	MRF1513NT1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET
Published	Nov 7, 2006
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N...
Datasheet	MRF1513NT1 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data MRF1513 Rev.
6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz.
The high gain and broadband performance of this device make it ideal for large−signal, common source amplifier applications in 7.
5 volt portable and 12.
5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.
5 Volts D Output Power — 3 Watts Power Gain — 11 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 15.
5 Vdc, 520 MHz, 2 dB Overdrive • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal G Impedance Parameters • Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request • N Suffix Indicates Lead−Free Terminations S • In Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MRF1513NT1 MRF1513T1 520 MHz, 3 W, 12.
5 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFET CASE 466−03, STYLE 1 PLD−1.
5 PLASTIC Table 1.
Maximum Ratings Rating Drain−Source Voltage Gate−Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value −0.
5, +40 ± 20 2 31.
25 0.
25 − 65 to +150 150 Unit Vdc Vdc Adc W W/°C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 4 Unit °C/W Table 3.
Moisture Sensitivity Level Test Methodology Per JESD 22−A113, IPC/JEDEC J−STD−020 1.
Calculated based on the formula PD = TJ – TC RθJC Rating 1 Package Peak Temperature 260 Unit °C NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
© Freescale Semiconductor, Inc.
, 2005.
All rights reserved.
MRF1513NT1 MRF1513T1 1 RF Device Data Freescale Semiconductor DataSheet 4 U .
com www.
DataSheet4U.
com Ta...

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MRF1513NT1 RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET - Freescale Semiconductor

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