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STC03DE170

ST Microelectronics
Part Number STC03DE170
Manufacturer ST Microelectronics
Description HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
Published Nov 7, 2006
Detailed Description www.DataSheet4U.com STC03DE170 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT™ 1700 V - 3 A - 0.55 W Table 1: General ...
Datasheet PDF File STC03DE170 PDF File

STC03DE170
STC03DE170

Overview
www.
DataSheet4U.
com STC03DE170 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT™ 1700 V - 3 A - 0.
55 W Table 1: General Features VCS(ON) 1V n n n n Figure 1: Package RCS(ON) 0.
55 W IC 1.
8 A LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1700 V VERY LOW CISS DRIVEN BY RG = 4.
7 W 3 4 APPLICATION n AUX SMPS FOR THREE PHASE MAINS DESCRIPTION The STC03DE170 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology.
The STC03DE170 is designed for use in aux flyback smps for any three phase application.
1 2 TO247-4L Figure 2: Internal Schematic Diagram Electrical Symbol Table 2: Order Code Part Number STC03DE170 Marking STC03DE170 Package TO247-4L Device Structure Packaging TUBE October 2004 Rev.
2 1/9 DataSheet 4 U .
com www.
DataSheet4U.
com STC03DE170 Table 3: Absolute Maximum Ratings Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ Parameter Collector-Source Voltage (VBS = VGS = 0 V) Base-Source Voltage (IC= 0, VGS = 0 V) Source-Base Voltage (IC= 0, VGS = 0 V) Gate-Source Voltage Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 1ms) Total Dissipation at TC = 25 oC Storage Temperature Max.
Operating Junction Temperature Value 1700 30 9 ± 20 3 6 2 4 100 -65 to 125 125 Unit V V V V A A A A W °C °C Table 4: Thermal Data Symbol Rthj-case Parameter Thermal Resistance Junction-Case Max 1 Unit o C/W Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICS(SS) IBS(OS) ISB(OS) Parameter Collector-Source Current (VBS = VGS = 0 V) Base-Source Current (IC = 0 , VGS = 0 V) Source-Base Current (IC = 0 , VGS = 0 V) IGS(OS) Gate-Source Leakage VCS(ON) Collector-Source ON Voltage hFE DC Current Gain VGS = ± 20 V VGS = 10 V IC = 1.
8 A VGS = 10 V IC = 0.
7 A IC = 1.
8 A IC = 0.
7 A IB = 0.
36 A IB = 70 mA 3.
5 6 1 1 5 10 1 0.
8 1.
5 2.
2 750 12.
5 1.
2 1...


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