DatasheetsPDF.com

SUM60N04-05LT

Vishay Siliconix
Part Number SUM60N04-05LT
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Nov 9, 2006
Detailed Description www.DataSheet4U.com SUM60N04-05LT Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode PRODUCT SUMMARY V(BR...
Datasheet PDF File SUM60N04-05LT PDF File

SUM60N04-05LT
SUM60N04-05LT

Overview
www.
DataSheet4U.
com SUM60N04-05LT Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode PRODUCT SUMMARY V(BR)DSS (V) 40 FEATURES ID (A) 60a 20a rDS(on) (W) 0.
0045 @ VGS = 10 V 0.
0065 @ VGS = 4.
5 V D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D D2PAK-5L D Automotive D Industrial T1 G 1 2 3 4 5 T2 D1 D2 S G D T1 S T2 N-Channel MOSFET Ordering Information: SUM60N04-05LT ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb L = 0.
1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit 40 "20 60a 60a 250 60a 60a 180 200c 3.
75d −55 to 175 Unit V A mJ W _C Maximum Power Dissipationa Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientd Junction-to-Case Notes a.
Package limited.
b.
Duty cycle v 1%.
c.
See SOA curve for voltage derating.
d.
When mounted on 1” square PCB (FR-4 material).
Document Number: 71747 S-40862—Rev.
C, 03-May-04 www.
vishay.
com PCB Mountd Symbol RthJA RthJC Limit 40 0.
75 Unit _C/W 1 www.
DataSheet4U.
com SUM60N04-05LT Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 40 V, VGS = 0 V, TJ = 125_C VDS = 40 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 60 A Drain Source On-State Drain-Source On State Resistancea rDS(on) DS( ) VGS = 4.
5 V, ID = 20 A VGS = 10 V, ID = 60 A, TJ = 125_C VGS = 10 V, ID = 60 A, TJ = 175_C Sense D...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)