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SUM60N06-15

Vishay Siliconix
Part Number SUM60N06-15
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Nov 9, 2006
Detailed Description www.DataSheet4U.com SUM60N06-15 Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 FE...
Datasheet PDF File SUM60N06-15 PDF File

SUM60N06-15
SUM60N06-15

Overview
www.
DataSheet4U.
com SUM60N06-15 Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 FEATURES rDS(on) (W) ID (A) 60 a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.
015 @ VGS = 10 V APPLICATIONS D Automotive Applications Such As: − ABS − EPS − Motor Drives D Industrial D TO-263 G G D S S Top View Ordering Information: SUM60N06-15 SUM60N06-15-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.
1 mH TC = 25_C TA = 25_C c TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 "20 60 35 100 35 61 100b 3.
75 −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient—PCB Mountc Junction-to-Case Notes a.
Duty cycle v 1%.
b.
See SOA curve for voltage derating.
c.
When mounted on 1” square PCB (FR-4 material).
Document Number: 72080 S-32406—Rev.
B, 24-Nov-03 www.
vishay.
com Symbol RthJA RthJC Limit 40 1.
4 Unit _C/W 1 www.
DataSheet4U.
com SUM60N06-15 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C VDS = 15 V, ID = 30 A 20 100 0.
012 0.
015 0.
025 0.
030 S W 60 2 4 "100 1 50 250 A mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capa...


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