DatasheetsPDF.com

SUM85N03-08P

Vishay Siliconix
Part Number SUM85N03-08P
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Nov 9, 2006
Detailed Description www.DataSheet4U.com SUM85N03-08P Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY...
Datasheet PDF File SUM85N03-08P PDF File

SUM85N03-08P
SUM85N03-08P

Overview
www.
DataSheet4U.
com SUM85N03-08P Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.
0075 @ VGS = 10 V 0.
0105 @ VGS = 4.
5 V ID (A) 85 72 D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency New Package with Low Thermal Resistance 100% Rg Tested APPLICATIONS D TO-263 D Buck Converter − High Side − Low Side D Synchronous Rectifier − Secondary Rectifier G G D S Top View S Ordering Information: SUM85N03-08P SUM85N03-08P-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.
1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 85 60 200 50 125 100b 3.
75 −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mountc J Junction-to-Ambient ti t A bi t Junction-to-Case Notes a.
Duty cycle v 1%.
b.
See SOA curve for voltage derating.
c.
When mounted on 1” square PCB (FR-4 material).
Document Number: 71816 S-32523—Rev.
D, 08-Dec-03 www.
vishay.
com Free Air RthJA RthJC Symbol Limit 40 62.
5 1.
5 Unit _C/W 1 www.
DataSheet4U.
com SUM85N03-08P Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage g Drain Current IDSS ID(on) VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain Source On-State Drain-Source On State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)