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SI3850DV

Vishay Siliconix
Part Number SI3850DV
Manufacturer Vishay Siliconix
Description Specification Comparison
Published Nov 11, 2006
Detailed Description www.DataSheet4U.com Specification Comparison Vishay Siliconix Si3850ADV vs. Si3850DV Description: Package: Pin Out: Co...
Datasheet PDF File SI3850DV PDF File

SI3850DV
SI3850DV

Overview
www.
DataSheet4U.
com Specification Comparison Vishay Siliconix Si3850ADV vs.
Si3850DV Description: Package: Pin Out: Complementary MOSFET Half-Bridge (N- and P-Channel) TSOP-6 Identical Part Number Replacements Si3850ADV-T1-E3 Replaces Si3850DV-T1-E3 Si3850ADV-T1-E3 Replaces Si3850DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TA = 25 °C Continuous Drain Current TA = 70 °C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25 °C TA = 70 °C IDM IS PD Tj and Tstg RthJA ID VDS VGS Symbol N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Si3850ADV 20 - 20 ± 12 ± 12 1.
4 - 0.
96 1.
1 - 0.
77 3.
5 - 2.
0 0.
9 - 0.
9 1.
08 0.
7 - 55 to 150 115 Si3580DV 20 - 20 ± 12 ± 12 1.
2 - 0.
85 0.
95 - 0.
65 3.
5 - 2.
5 1 -1 1.
25 0.
8 - 55 to 150 100 W °C °C/W A V Unit Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Document Number: 73853 Revision: 31-Oct-06 www.
v...


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