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MRF1550FNT1

Part Number	MRF1550FNT1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Published	Nov 14, 2006
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 11, 9/2006 RF Power Field E...
Datasheet	MRF1550FNT1 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF1550N Rev.
11, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.
5 volt mobile FM equipment.
• Specified Performance @ 175 MHz, 12.
5 Volts Output Power — 50 Watts Power Gain — 12 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.
6 Vdc, 175 MHz, 2 dB Overdrive Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Broadband - Full Power Across the Band: 135 - 175 MHz • Broadband Demonstration Amplifier Information Available Upon Request • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations.
RoHS Compliant.
• In Tape and Reel.
T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1550NT1 MRF1550FNT1 175 MHz, 50 W, 12.
5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1264 - 09, STYLE 1 TO - 272 - 6 WRAP PLASTIC MRF1550NT1 CASE 1264A - 02, STYLE 1 TO - 272 - 6 PLASTIC MRF1550FNT1 Table 1.
Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature (1) Symbol VDSS VGS ID PD Tstg TJ Value - 0.
5, +40 ± 20 12 165 0.
50 - 65 to +150 200 Unit Vdc Vdc Adc W W/°C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value(2) 0.
75 Unit °C/W Table 3.
Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 1.
Calculated based on the formula PD = TJ – TC Rating 1 Package Peak Temperature 260 Unit °C RθJC 2.
MTTF calculator available at http://www.
freescale.
com/rf.
Select Tools/Software/Application Software/Calculat...

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MRF1550FNT1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs - Freescale Semiconductor

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