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TIM7785-4UL

Part Number	TIM7785-4UL
Manufacturer	Toshiba Semiconductor
Description	MICROWAVE POWER GaAs FET
Published	Nov 15, 2006
Detailed Description	FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 8.5dB at 7.7G...
Datasheet	TIM7785-4UL PDF File

Overview

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.
5dBm at 7.
7GHz to 8.
5GHz ･HIGH GAIN G1dB= 8.
5dB at 7.
7GHz to 8.
5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 ∆G VDS= 10V IDSset= 0.
9A f = 7.
7 to 8.
5GHz UNIT dBm dB A dB Power Added Efficiency ηadd % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 25.
5dBm, ∆f= 5MHz (Single Carrier Level) A Channel Temperature Rise ∆Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 150 Ω MIN.
35.
5 7.
5    -44   TYP.
MAX.
36.
5  8.
5  1.
1 1.
3  ±0.
6 35  -47  1.
1 1.
3  80 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Vol...

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TIM7785-4UL MICROWAVE POWER GaAs FET - Toshiba Semiconductor

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