DatasheetsPDF.com

XN06435

Panasonic Semiconductor
Part Number XN06435
Manufacturer Panasonic Semiconductor
Description Silicon PNP epitaxial planar type
Published Nov 17, 2006
Detailed Description www.DataSheet4U.com Composite Transistors XN06435 (XN6435) Silicon PNP epitaxial planar type Unit: mm For high-freque...
Datasheet PDF File XN06435 PDF File

XN06435
XN06435

Overview
www.
DataSheet4U.
com Composite Transistors XN06435 (XN6435) Silicon PNP epitaxial planar type Unit: mm For high-frequency amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 4 2.
90+0.
20 –0.
05 1.
9±0.
1 (0.
95) (0.
95) 5 6 0.
16+0.
10 –0.
06 1.
50+0.
25 –0.
05 2.
8+0.
2 –0.
3 3 2 1 0.
30+0.
10 –0.
05 ■ Basic Part Number • 2SA1022 × 2 0.
50+0.
10 –0.
05 10˚ 1.
1+0.
2 –0.
1 (0.
65) ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating −30 −20 −5 −30 300 150 −55 to +150 Unit V V V mA mW °C °C 1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74 0 to 0.
1 Marking Symbol: 7W Internal Connection 4 5 6 1.
1+0.
3 –0.
1 4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package Tr2 3 2 Tr1 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE ratio * Symbol VBE ICBO ICEO IEBO hFE hFE(Small /Large) Conditions VCE = −10 V, IC = −1 mA VCB = −10 V, IE = 0 VCE = −20 V, IB = 0 VEB = −5 V, IC = 0 VCB = −10 V, IE = 1 mA VCB = −10 V, IE = 1 mA IC = −10 mA, IB = −1 mA VCB = −10 V, IE = 1 mA, f = 200 MHz VCB = −10 V, IE = 1 mA, f = 5 MHz VCB = −10 V, IE = 1 mA, f = 2 MHz VCE = −10 V, IE = 1 mA, f = 10.
7 MHz Min Typ − 0.
7 Max − 0.
1 −100 −10 Unit V µA µA µA   V MHz 50 0.
50 0.
99 − 0.
1 150 2.
8 22 1.
2 220 Collector-emitter saturation voltage Transition frequency Noise figure Reverse transfer impedance Reverse transfer capacitance (Common emitter) VCE(sat) fT NF Zrb Cre dB Ω pF Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring m...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)