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STD7NB20

ST Microelectronics
Part Number STD7NB20
Manufacturer ST Microelectronics
Description N-CHANNEL MOSFET
Published Nov 20, 2006
Detailed Description www.DataSheet4U.com N-CHANNEL 200V - 0.3Ω - 7A DPAK/IPAK PowerMESH™ MOSFET TYPE STD7NB20 STD7NB20-1 s s s s s s STD7NB...
Datasheet PDF File STD7NB20 PDF File

STD7NB20
STD7NB20

Overview
www.
DataSheet4U.
com N-CHANNEL 200V - 0.
3Ω - 7A DPAK/IPAK PowerMESH™ MOSFET TYPE STD7NB20 STD7NB20-1 s s s s s s STD7NB20 STD7NB20-1 VDSS 200 V 200 V RDS(on) < 0.
40 Ω < 0.
40 Ω ID 7A 7A TYPICAL RDS(on) = 0.
3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 3 1 DPAK TO-252 IPAK TO-251 1 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature Value 200 200 ± 30 7 5 28 55 0.
44 5.
5 – 65 to 150 150 (1) ISD≤ 7A, di/dt≤200 A/µs, VDD≤ V (BR)DSS, Tj ≤TjMAX Unit V V V A A A W W/°C V/ns °C °C (•)Pulse width limited by safe operating area July 2002 1/10 STD7NB20 / STD7NB20-1 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.
27 100 275 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Valu...


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