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ISL9N316AD3ST

Fairchild Semiconductor
Part Number ISL9N316AD3ST
Manufacturer Fairchild Semiconductor
Description N-Channel Logic Level PWM Optimized UltraFET
Published Nov 22, 2006
Detailed Description www.DataSheet4U.com ISL9N316AD3ST February 2002 ISL9N316AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Po...
Datasheet PDF File ISL9N316AD3ST PDF File

ISL9N316AD3ST
ISL9N316AD3ST

Overview
www.
DataSheet4U.
com ISL9N316AD3ST February 2002 ISL9N316AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features • Fast switching • rDS(ON) = 0.
014Ω (Typ), VGS = 10V • rDS(ON) = 0.
020Ω (Typ), VGS = 4.
5V • Qg (Typ) = 13nC, VGS = 5V • Qgd (Typ) = 4.
5nC • CISS (Typ) = 1450pF Applications • DC/DC converters DRAIN (FLANGE) D GATE SOURCE G S TO-252 MOSFET Maximum Rat...


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