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NTMSD3P303R2

ON Semiconductor
Part Number NTMSD3P303R2
Manufacturer ON Semiconductor
Description P-Channel Enhancement-Mode Power MOSFET and Schottky Diode
Published Nov 22, 2006
Detailed Description NTMSD3P303R2 FETKY™ P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Effi...
Datasheet PDF File NTMSD3P303R2 PDF File

NTMSD3P303R2
NTMSD3P303R2

Overview
NTMSD3P303R2 FETKY™ P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF • Independent Pin−Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use • Less Component Placement for Board Space Savings • SO−8 Surface Mount Package, Mounting Information for SO−8 Package Provided • Pb−Free Package is Available Applications • DC−DC Converters • Low Voltage Motor Control • Power Management in Portable and Battery−Powered Products, i.
e.
: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C PCuolnsteinduDourasinDrCauinrrCenutrr(eNnot t@e 4T)A = 70°C Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −30 Vdc, VGS = −4.
5 Vdc, Peak IL = −7.
5 Apk, L = 5 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds VDSS VGS RPqDJA ID ID IDM RPqDJA ID IDIDM RPqDJA ID ID IDM TJ, Tstg EAS TL −30 "20 171 0.
73 −2.
34 −1.
87 −8.
0 V V °C/W W A A A 100 1.
25 −3.
05 −2.
44 −12 °C/W W A A A 62.
5 2.
0 −3.
86 −3.
10 −15 −55 to +150 140 °C/W W A A A °C mJ 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Funct...


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