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D5017UK

Part Number	D5017UK
Manufacturer	Seme LAB
Description	GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET
Published	Nov 22, 2006
Detailed Description	www.DataSheet4U.com TetraFET D5017UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLI...
Datasheet	D5017UK PDF File

Overview

www.
DataSheet4U.
com TetraFET D5017UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 50V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss DM PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 DRAIN GATE • SIMPLE BIAS CIRCUITS • LOW NOISE DIM A B C D E F G H I J K M mm 24.
76 18.
42 45° 6.
35 3.
17 Dia.
5.
71 12.
7 Dia.
6.
60 0.
13 4.
32 3.
17 26.
16 Tol.
0.
13 0.
13 5° 0.
13 0.
13 0.
13 0.
13 REF 0.
02 0.
13 0.
13 0.
25 Inches 0.
975 0.
725 45° 0.
25 0.
125 Dia.
0.
225 0.
500 Dia.
0.
260 0.
005 0.
170 0.
125 1.
03 Tol.
0.
005 0.
005 5° 0.
005 0.
005 0.
005 0.
005 REF 0.
001 0.
005 0.
005 0.
010 • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 220W 125V ±20V 18A –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press.
However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk Document Number 3139 Issue 1 D5017UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance...

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D5017UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET - Seme LAB

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