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MMDF3N02HD

ON Semiconductor
Part Number MMDF3N02HD
Manufacturer ON Semiconductor
Description Power MOSFET
Published Nov 24, 2006
Detailed Description www.DataSheet4U.com MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N–Channel SO–8, Dual These miniature sur...
Datasheet PDF File MMDF3N02HD PDF File

MMDF3N02HD
MMDF3N02HD

Overview
www.
DataSheet4U.
com MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance.
They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive – Can Be Driven by Logic ICs • Miniature SO–8 Surface Mount Package – Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Mounting Information for SO–8 Package Provided 8 http://onsemi.
com 3 AMPERES 20 VOLTS RDS(on) = 90 mW N–Channel D G S MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.
0 MΩ) Gate–to–Source Voltage – Continuous Drain Current – Continuous @ TA = 25°C Drain Current – Continuous @ TA = 100°C Drain Current – Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C (Note 1.
) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.
0 Vdc, Peak IL = 9.
0 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance – Junction to Ambient (Note 1.
) Maximum Lead Temp...


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