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AT12015-21

Part Number	AT12015-21
Manufacturer	Advanced Semiconductor
Description	SILICON ABRUPT VARACTOR DIODE
Published	Nov 27, 2006
Detailed Description	www.DataSheet4U.com AT12015-21 SILICON ABRUPT VARACTOR DIODE DESCRIPTION: The AT12015-21 is Designed for High Perform...
Datasheet	AT12015-21 PDF File

Overview

www.
DataSheet4U.
com AT12015-21 SILICON ABRUPT VARACTOR DIODE DESCRIPTION: The AT12015-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic.
PACKAGE STYLE 21 FEATURES INCLUDE: • High Tuning Ratio, ∆CT = 8.
5 MIN.
• High Quality Factor, Q = 300 MIN.
CP = .
20 pF • Hermetic Pkg, LS = .
42 nH MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.
75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W O O O O NONE CHARACTERISTICS SYMBOL VR VF IR CT ∆ CT Q RS IR = 10 µA IF = 1 mA VR = 100 V VR = 4 V CT0/ CT120 VR = 4 V IF = 10 mA TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 120 1.
0 100 f = 1.
0 MHz f = 1.
0 MHz f...

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AT12015-21 SILICON ABRUPT VARACTOR DIODE - Advanced Semiconductor

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