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MRF6S9130HR3

Part Number	MRF6S9130HR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Nov 27, 2006
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 4, 5/2006 RF Power Field ...
Datasheet	MRF6S9130HR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev.
4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz.
Suitable for multicarrier amplifier applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg.
, Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 19.
2 dB Drain Efficiency — 30.
5% ACPR @ 750 kHz Offset — - 48.
1 dBc in 30 kHz...

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