DatasheetsPDF.com

MRFG35005NT1

Part Number	MRFG35005NT1
Manufacturer	Freescale Semiconductor
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Published	Dec 4, 2006
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsen...
Datasheet	MRFG35005NT1 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev.
2, 5/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.
8 to 3.
6 GHz.
Device is unmatched and is suitable for use in Class AB linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.
55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.
84 MHz BW, 64 DPCH (8.
5 dB P/A @ 0.
01% Probability) Output Power — 450 mWatt Power Gain — 11 dB Efficiency — 25% • 4.
5 Watts P1dB @ 3.
55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • N Suffix ...

Similar Datasheet

MRFG35005NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor - Freescale Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)