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IRLR3410

International Rectifier
Part Number IRLR3410
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Dec 5, 2006
Detailed Description www.DataSheet4U.com PD - 91607B IRLR/U3410 HEXFET® Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance l Sur...
Datasheet PDF File IRLR3410 PDF File

IRLR3410
IRLR3410

Overview
www.
DataSheet4U.
com PD - 91607B IRLR/U3410 HEXFET® Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3410) l Straight Lead (IRLU3410) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V G S RDS(on) = 0.
105Ω ID = 17A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications.
Power dissipation levels up to 1.
5 watts are possible in typical surface mount applications.
D -P A K T O -2 52 A A I-P A K T O -25 1 A A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current … Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current… Repetitive Avalanche Energy… Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
17 12 60 79 0.
53 ± 16 150 9.
0 7.
9 5.
0 -55 to + 175 300 (1.
6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient Typ.
––– ––– ––– Max.
1.
9 50 110 Units °C/W www.
irf.
com 1 5/11/98 IRLR/U3410 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistan...


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