DatasheetsPDF.com

IRF2807ZPBF

International Rectifier
Part Number IRF2807ZPBF
Manufacturer International Rectifier
Description AUTOMOTIVE MOSFET
Published Dec 6, 2006
Detailed Description Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l ...
Datasheet PDF File IRF2807ZPBF PDF File

IRF2807ZPBF
IRF2807ZPBF

Overview
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
PD - 95488A IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 9.
4mΩ G ID = 75A S TO-220AB D2Pak TO-262 IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig.
9) Continuous Drain Current, VGS @ 10V (Package Limited) c Pulsed Drain Current Maximum Power Dissipation VGS EAS EAS (tested) IAR EAR Linear Derating Factor Gate-to-Source Voltage d Single Pulse Avalanche Energy (Thermally Limited) i Single Pulse Avalanche Energy Tested Value c Avalanche Current h Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient j Junction-to-Ambient (PCB Mount, steady state) HEXFET® is a registered trademark of International Rectifier.
www.
irf.
com Max.
89 63 75 350 170 1.
1 ± 20 160 200 See Fig.
12a,12b,15,16 -55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Typ.
––– 0.
50 ––– ––– Max.
0.
90 ––– 62 40 Units A W W/°C V mJ A mJ °C Units °C/W 1 07/22/10 IRF2807Z/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)