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MRF7S21170HSR3

Part Number	MRF7S21170HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Dec 7, 2006
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs ...
Datasheet	MRF7S21170HSR3 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications.
 Typical Single--Carrier W--CDMA 1C4h0a0nnmeAl ,BPanoudtw=id5t0h Watts Avg.
, f = 3.
84 MHz, =Pe2r1fo6r7m.
5anMcHe:z,VIDQDM=a2g8nVituodltes,CIDliQpp=ing, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 16 dB Drain Efficiency — 31% Device Output Signal PAR — 6.
1 dB @ 0.
01% Probability on CCDF ACPR @ 5 MHz Offset — --37 dBc ...

Similar Datasheet

MRF7S21170HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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