DatasheetsPDF.com

BSO315C

Part Number	BSO315C
Manufacturer	Infineon Technologies
Description	SIPMOS Small-Signal-Transistor
Published	Dec 9, 2006
Detailed Description	www.DataSheet4U.com Preliminary data BSO 315 C SIPMOS ® Small-Signal-Transistor Features • Dual N- and P -Channel • ...
Datasheet	BSO315C PDF File

Overview

www.
DataSheet4U.
com Preliminary data BSO 315 C SIPMOS ® Small-Signal-Transistor Features • Dual N- and P -Channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current N P -30 0.
25 -2.
3 V Ω A VDS RDS(on) ID 30 0.
11 3.
4 Enhancement mode • Logic Level • Avalanche rated • dv/dt rated Type BSO 315 C Package SO 8 Ordering Code Q67041-S4014 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol N Continuous drain current Value P Unit A ID 3.
4 2.
7 -2.
3 -1.
8 -7.
2 T A = 25 °C T A = 70 °C Pulsed drain current I D puls EAS 11.
6 T A = 25 °C Avalanche energy, single pulse mJ 25 35 0.
2 kV/µs 6 6 ±20 2 V W °C I D = 2.
9 A, V DD = 25 V, R GS = 25 Ω I D = -1.
8 A, V DD = -25 V, R GS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt, T jmax = 150 °C EAR dv/dt 0.
2 I S = 2.
9 A, V DS = 24 , di/dt = 200 A/µs I S = -1.
8 A, V DS = -24 , di/dt = -200 A/µs Gate source voltage Power dissipation VGS Ptot T j , T stg ±20 2 T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 -55.
.
.
+150 55/150/56 Page 1 1999-09-22 Preliminary data Termal Characteristics Parameter Dynamic Characteristics Thermal resistance, junction - soldering point (Pin 5, 6, 7, 8) SMD version, device on PCB: @ min.
footprint; t ≤ 10 sec.
@ 6 cm 2 cooling area 1) ; t ≤ 10 sec.
@ min.
footprint; t ≤ 10 sec.
@ 6 cm 2 cooling area 1) ; t ≤ 10 sec.
N N P P N RthJS P Symbol min.
BSO 315 C Values typ.
max.
40 40 100 62.
5 70 62.
5 Unit K/W RthJA Static Characteristics , at Tj = 25 °C, unless otherwise specified Drain- source breakdown voltage V(BR)DSS N P 30 -30 1.
6 -1.
5 0.
1 10 -0.
1 -10 2 -2.
0 V VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA Gate threshold voltage, VGS = VDS ID = 20 µA VGS(th) N P 1.
2 -1 ID = -230 µA Zero gate voltage drain current IDSS N N P P 1 100 -1 -100 µA VDS = 30 V, VGS = 0 V, Tj = 25 °C VDS = 30 V, VGS = 0 V, Tj = 125 °C VDS = -30 V, VGS = 0 V, Tj = 25 °C V...

Similar Datasheet

BSO315C SIPMOS Small-Signal-Transistor - Infineon Technologies

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)