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HY29DS163

Hynix Semiconductor
Part Number HY29DS163
Manufacturer Hynix Semiconductor
Description (HY29DS162 / HY29DS163) Simultaneous Read/Write Flash Memory
Published Dec 12, 2006
Detailed Description www.DataSheet4U.com HY29DS162/HY29DS163 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Wri...
Datasheet PDF File HY29DS163 PDF File

HY29DS163
HY29DS163

Overview
www.
DataSheet4U.
com HY29DS162/HY29DS163 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.
8 to 2.
2 V (2.
0V ± 10%) − Ideal for battery-powered applications Simultaneous Read/Write Operations − Host system can program or erase in one bank while simultaneously reading from any sector in the other bank with zero latency between read and write operations High Performance − 120 and 130 ns access time versions with ± 10% power supply and 30pF load Ultra Low Power Consumption (Typical Values) − Automatic sleep mode current: 200 nA − Sta...


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