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IRGP50B60PDPBF

International Rectifier
Part Number IRGP50B60PDPBF
Manufacturer International Rectifier
Description WARP2 SERIES IGBT
Published Dec 12, 2006
Detailed Description www.DataSheet4U.com PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C Applic...
Datasheet PDF File IRGP50B60PDPBF PDF File

IRGP50B60PDPBF
IRGP50B60PDPBF


Overview
www.
DataSheet4U.
com PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead- Free VCES = 600V VCE(on) typ.
= 2.
00V @ VGE = 15V IC = 33A G E Features • • • • • • • NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability n-channel Equivalent MOSFET Parameters RCE(on) typ.
= 61mΩ ID (FET equivalent) = 50A E C G Benefits • Parallel Operation for Higher Current Applications • Lower Conduction Losses and Switching Losses • Higher Switching Frequency up to 150kHz TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFRM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.
Fig.
C.
T.
4) Clamped Inductive Load Current Max.
600 75 42 150 150 50 25 100 ±20 370 150 -55 to +150 Units V d A Diode Continous Forward Current Diode Continous Forward Current Maximum Repetitive Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw e V W °C 300 (0.
063 in.
(1.
6mm) from case) 10 lbf·in (1.
1 N·m) Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight Min.
––– ––– ––– ––– ––– Typ.
––– ––– 0.
50 ––– 6.
0 (0.
21) Max.
0.
34 0.
64 ––– 40 ––– Units °C/W g (oz) 12/1/04 1 www.
irf.
com IRGP5...



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