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PMEM4020ND

NXP
Part Number PMEM4020ND
Manufacturer NXP
Description NPN transistor/Schottky-diode module
Published Dec 14, 2006
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 PMEM4020ND NPN transistor/Schottky-diode ...
Datasheet PDF File PMEM4020ND PDF File

PMEM4020ND
PMEM4020ND

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 PMEM4020ND NPN transistor/Schottky-diode module Product specification 2003 Nov 10 Philips Semiconductors Product specification NPN transistor/Schottky-diode module FEATURES • 600 mW total power dissipation • High current capability • Reduces required PCB area • Reduced pick and place costs • Small plastic SMD package.
Transistor: • Low collector-emitter saturation voltage.
Diode: • Ultra high-speed switching • Very low forward voltage • Guard ring protected.
APPLICATIONS • DC-to-DC converters • Inductive load drivers • MOSFET drivers.
DESCRIPTION Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package.
PNP complement: PMEM4020PD.
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEM4020ND − DESCRIPTION plastic surface mounted package; 6 leads Marking code: B6.
handbook, halfpage 6 PMEM4020ND PINNING PIN 1 2 3 4 5 6 emitter not connected cathode anode base collector DESCRIPTION 5 4 4 5 1 3 6 1 2 3 MGU865 Fig.
1 Simplified outline (SOT457) and symbol.
VERSION SOT457 2003 Nov 10 2 Philips Semiconductors Product specification NPN transistor/Schottky-diode module LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL NPN transistor VCBO VCEO VEBO IC collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter open base open collector note 1 note 2 note 3 Ts ≤ 55 °C; note 4 ICM IBM Ptot peak collector current peak base current total power dissipation Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 Tamb ≤ 25 °C; note 3 Ts ≤ 55 °C; note 4 Tj VR IF IFSM Ptot junction temperature Schottky barrier diode continuous reverse voltage continuous forward current non-repetitive peak forward current total power dissipation t = 8.
3 ms square wave Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; no...


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