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ZXMP2120E5

Zetex Semiconductors
Part Number ZXMP2120E5
Manufacturer Zetex Semiconductors
Description 200V P-CHANNEL ENHANCEMENT MODE MOSFET
Published Dec 14, 2006
Detailed Description www.DataSheet4U.com ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -12...
Datasheet PDF File ZXMP2120E5 PDF File

ZXMP2120E5
ZXMP2120E5


Overview
www.
DataSheet4U.
com ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown.
Applications benefiting from this device include a variety of Telecom and general high voltage circuits.
A 4 pin SOT223 version is also available (ZXMP2120G4).
FEATURES SOT23-5 • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • SOT23-5 package variant engineered to increase spacing between high voltage pins.
APPLICATIONS • Active clamping of primary side MOSFETs in 48 volt DC-DC converters ORDERING INFORMATION DEVICE ZXMP2120E5TA REEL SIZE (inches) 7 TAPE WIDTH (mm) 8mm embossed QUANTITY PER REEL 3,000 units N/C D N/C S DEVICE MARKING G • P120 PINOUT - TOP VIEW ISSUE 2 - SEPTEMBER 2006 1 ZXMP2120E5 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage SYMBOL V DSS V GS LIMIT -200 ± 20 -122 -0.
7 -0.
7 0.
75 6 T j : T stg -55 to +150 UNIT V V mA A A W mW/°C °C Continuous Drain Current (V GS =10V; T amb =25°C) (a) I D I DM Pulsed Drain Current (c) Pulsed Source Current (Body Diode) (c) Power Dissipation at T amb =25°C Linear Derating Factor (a) I SM PD Operating and Storage Temperature Range THERMAL RESISTANCE PARAMETER Junction to Ambient (a) SYMBOL R θ JA VALUE 167 UNIT °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t р5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature.
Refer to Transient Thermal Impedance graph.
ISSUE 2 - SEPTEMBER 2006 2 ZXMP2120E5 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER STATIC Drain-Source Breakd...



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