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FDMS3572

Fairchild Semiconductor
Part Number FDMS3572
Manufacturer Fairchild Semiconductor
Description N-Channel UltraFET Trench MOSFET
Published Dec 15, 2006
Detailed Description www.DataSheet4U.com FDMS3572 N-Channel UltraFET Trench® MOSFET November 2006 FDMS3572 N-Channel UltraFET Trench® MOSF...
Datasheet PDF File FDMS3572 PDF File

FDMS3572
FDMS3572

Overview
www.
DataSheet4U.
com FDMS3572 N-Channel UltraFET Trench® MOSFET November 2006 FDMS3572 N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.
5mΩ Features General Description „ Max rDS(on) = 16.
5mΩ at VGS = 10V, ID = 8.
8A „ Max rDS(on) = 24mΩ at VGS = 6V, ID = 8.
4A „ Typ Qg = 28nC at VGS = 10V „ Low Miller Charge „ Optimized efficiency at high frequencies „ RoHS Compliant tm UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Application „ DC - DC Conversion Pin 1 S S S G D D D D D D D 5 6 7 8 4 G 3 S 2 S 1 S D Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 80 ±20 22 48 8.
8 50 78 2.
5 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.
6 50 °C/W Package Marking and Ordering Information Device Marking FDMS3572 Device FDMS3572 Package Power 56 Reel Size 7’’ Tape Width 12mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDMS3572 Rev.
C 1 www.
fairchildsemi.
com FDMS3572 N-Channel UltraFET Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 64V, VGS = 0V VGS = ±20V, VDS = 0V 80 76 ...


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