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IRGMC30F

International Rectifier
Part Number IRGMC30F
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Dec 16, 2006
Detailed Description www.DataSheet4U.com PD -90714B IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Electrically Isolated a...
Datasheet PDF File IRGMC30F PDF File

IRGMC30F
IRGMC30F

Overview
www.
DataSheet4U.
com PD -90714B IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.
1V @VGE = 15V, IC = 12A Description n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-curr...


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