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IRGMC50F

International Rectifier
Part Number IRGMC50F
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Dec 16, 2006
Detailed Description www.DataSheet4U.com PD -90718B IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Electrically Isolated and...
Datasheet PDF File IRGMC50F PDF File

IRGMC50F
IRGMC50F

Overview
www.
DataSheet4U.
com PD -90718B IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) max = 1.
7V @VGE = 15V, IC = 30A Description n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current applications.
The performance of various IGBTs varies greatly with frequency.
Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device.
TO-254AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C...


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