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APT50GP60B2DQ2G

Advanced Power Technology
Part Number APT50GP60B2DQ2G
Manufacturer Advanced Power Technology
Description POWER MOS 7 IGBT
Published Dec 19, 2006
Detailed Description www.DataSheet4U.com TYPICAL PERFORMANCE CURVES ® APT50GP60B2DQ2 APT50GP60B2DQ2G* APT50GP60B2DQ2(G) 600V *G Denotes R...
Datasheet PDF File APT50GP60B2DQ2G PDF File

APT50GP60B2DQ2G
APT50GP60B2DQ2G

Overview
www.
DataSheet4U.
com TYPICAL PERFORMANCE CURVES ® APT50GP60B2DQ2 APT50GP60B2DQ2G* APT50GP60B2DQ2(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT ® (B2) T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • SSOA Rated C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 7 All Ratings: TC = 25°C unless otherwise specified.
APT50GP60B2DQ2(G) UNIT Volts 600 ±30 @ TC = 25°C 150 72 190 190A @ 600V 625 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating a...


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