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START405

ST Microelectronics
Part Number START405
Manufacturer ST Microelectronics
Description NPN Silicon RF Transistor
Published Dec 19, 2006
Detailed Description www.DataSheet4U.com START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSI...
Datasheet PDF File START405 PDF File

START405
START405

Overview
www.
DataSheet4U.
com START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.
1dB @ 1.
8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.
8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 (SC70) ORDER CODE START405TR BRANDING 405 DESCRIPTION The START405 is a member of the START family that provide the state of the art of RF silicon process to the market.
Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo).
It offers performance level only archived with GaAs products before.
APPLICATIONS • LNA FOR GSM/DCS, DECT, PCS, PCN, CDMA, W-CDMA • GENERAL PURPOSE 500MHz-5GHz ABSOLUTE MAXIMUM RATINGS Symbol Vceo Vcbo Vebo Ic Ib Ptot Tstg Tj Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total dissipation, Ts = TBD Storage temperature Max.
operating junction temperature Parameter Value 4.
5 15 1.
5 10 1 45 -65 to 150 150 Unit V V V mA mA mW o o C C ABSOLUTE MAXIMUM RATINGS Rthjs Thermal Resistance Junction soldering point 270 o C/W July, 3 2002 1/7 START405 ELECTRICAL CHARACTERISTICS (Tj=25 oC,unless otherwise specified) Symbol Icbo Iebo Hfe NFmin Ga |S21|2 Gms (1) Parameter Collector cutoff current Emitter-base cutoff current DC current gain Minimim noise figure NFmin associated gain Insertion power gain Maximum stable gain 1dB compression point Ouput third order intercept point Test Conditions Vcb =5V, Ie = 0A Veb = 1.
5V, Ic = 0A Ic = 5mA, Vce = 4V Ic = 2mA, Vce = 2V, f = 1.
8GHz Ic = 2mA, Vce = 2V, f = 1.
8GHz Ic = 5mA, Vce = 2V, f = 1.
8GHz Ic = 5mA, Vce = 2V, f = 1.
8GHz Ic = 5mA,Vce = 2V, f = 1.
8GHz Ic = 5mA,Vce = 2V, f = 1.
8GHz Min.
Typ.
Max.
150 15 Unit nA µA 160 1.
1 19 17.
4 24.
2 5 15 dB dB dB dB dBm dBm P-1dB OIP3 Note(1): Gms = | S21 / S12 | PINOUT 4 3 PIN CONNECTION Top view 1 2 Pin No.
1 3 2,4 Description BASE COLLECTOR EMITTER SOT343 2/7 S...


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