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FDU8778

Fairchild Semiconductor
Part Number FDU8778
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Dec 20, 2006
Detailed Description FDD8778/FDU8778 N-Channel PowerTrench® MOSFET MPLEMENTATION March 2015 FDD8778/FDU8778 N-Channel PowerTrench® MOSFET 2...
Datasheet PDF File FDU8778 PDF File

FDU8778
FDU8778

Overview
FDD8778/FDU8778 N-Channel PowerTrench® MOSFET MPLEMENTATION March 2015 FDD8778/FDU8778 N-Channel PowerTrench® MOSFET 25V, 35A, 14mΩ Features General Description „ Max rDS(on) = 14.
0mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 21.
0mΩ at VGS = 4.
5V, ID = 33A „ Low gate charge: Qg(TOT) = 12.
6nC(Typ), VGS = 10V „ Low gate resistance This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on) and fast switching speed.
„ RoHS compliant AD FREE I Application LE „ DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D G D G G DS I-PAK S (TO-251AA) Short Lead I-PAK S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous (Package Limited) ID -Continuous (Die Limited) -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature Thermal Characteristics (Note 1) (Note 2) RθJC Thermal Resistance, Junction to Case TO-252,TO-251 RθJA RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area Package Marking and Ordering Information Device Marking FDD8778 FDU8778 FDU8778 Device FDD8778 FDU8778 FDU8778_F071 Package TO-252AA TO-251AA TO-251AA Reel Size 13’’ N/A(Tube) N/A(Tube) ©2006 Fairchild Semiconductor Corporation 1 FDD8778/FDU8778 Rev.
1.
2 Ratings 25 ±20 35 40 145 24 39 -55 to 175 Units V V A mJ W °C 3.
8 °C/W 100 °C/W 52 °C/W Tape Width 16mm N/A N/A Quantity 2500 units 75 units 75 units www.
fairchildsemi.
com FDD8778/FDU8778 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Bre...


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